Columnar grain growth of FePt(L10) thin films
نویسندگان
چکیده
منابع مشابه
Columnar grain growth of FePt(L10) thin films
Related Articles Densification of functional plasma polymers by momentum transfer during film growth Appl. Phys. Lett. 101, 211603 (2012) Ultrathin Si/C graded layer to improve tribological properties of Co magnetic films Appl. Phys. Lett. 101, 191601 (2012) Temperature and pressure dependent Mott potentials and their influence on self-limiting oxide film growth Appl. Phys. Lett. 101, 171605 (2...
متن کاملGrain Growth Mechanism of Cu Thin Films
Since Cu was found to be attractive as interconnect materials for ultra-large scale integrated (ULSI) Si devices, the electrical properties of Cu films have been extensively studied to prepare low resistance films. It was found in our previous papers that reduction of the electrical resistance of the Cu films was achieved by increasing grain sizes of the Cu films and large-grained Cu films were...
متن کاملIon beam enhanced grain growth in thin films
A research program has been established to study ion beam enhanced grain growth (IBEGG). Ion beam enhanced grain growth has been studied experimentally in Ge, Au and Si films. IBEGG has been characterized by varying the ion dose, ion energy, ion flux, ion species, temperature, and thin film deposition onrditions. The effect of these parameters on grain size and microstructure has Leen analyzed ...
متن کاملA Mathematical Model for Grain Growth in Thin Metallic Films
We use geometrical arguments based on grain boundary symmetries to introduce crystalline interfacial energies for interfaces in polycrystalline thin lms with a cubic lattice. These crystalline energies are incorporated into a multi{phase eld model. Our aim is to apply the multi{phase eld method to describe the evolution of faceted grain boundary triple junctions in epitaxially growing microstru...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2012
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3679463